PERSISTENT PHOTOCONDUCTIVITY CONTROL IN GaAs CHANNEL AlGaAs GATE DEVICES.

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作者：
Anon
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来源：
IBM technical disclosure bulletin | 1986年 / 29卷 / 02期
关键词：
SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE;
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摘要：
Persistent photoconductivity that may cause a shift in switching threshold and changes in transconductance in GaAs channel AlGaAs gate devices can be controlled by an n-type doped buffer layer in the substrate. The structure is shown.
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