Study on preparation and performances of Si based ferroelectric thin film

被引：0

作者：

Chen, Zheng ^{[1
]}

Tang, Tingao ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1996年 / 17卷 / 10期

关键词：

Fabrication - Sol-gels - Thin films - Titanium compounds - Zirconium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method for depositing ferroelectric thin films of Pb(Zr0.47 Ti0.53)O3 on platinized silicon by Sol-Gel technique is described. The ferroelectric thin film was investigated by XPS, SEM and XRD etc. and its hysteresis loop and C-V curve were measured by RT66A Standard Ferroelectric Meter. The effects of various processing parameters on the performance of the PZT capacitors are presented.

引用

页码：780 / 783