Silicon-germanium quantum-cascade lasers

被引：6

作者：

Kelsall, Robert W. ^{[1
]}

Soref, Richard A. ^{[2
]}

机构：

[1] Sch. of Electron./Elec. Engineering, University of Leeds

[2] Sensors Directorate, Air Force Research Laboratory, Hanscom AFB

来源：

International Journal of High Speed Electronics and Systems | 2003年 / 13卷 / 02期

关键词：

Intersubband; Silicon optoelectronics; Terahertz; Virtual substrate;

D O I：

10.1142/S012915640300182X

中图分类号：

学科分类号：

摘要：

The prospects and advantages of silicon germanium quantum cascade lasers are discussed, from both physical and technological perspectives. A range of Si/SiGe intersubband laser configurations are discussed, for both edge and surface emission. Recent experimental activity on mid- and far-infrared devices is reviewed, and the value of detailed theoretical tools for heterostructure design is highlighted. Steps towards silicon optoelectronic integration are also considered.

引用

页码：547 / 573

页数：26

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