Study of electrical properties of pulsed excimer laser deposited strontium titanate films

This paper presents the application of a pulsed laser ablation process for development of device quality SrTiO3 thin films, and evaluates its application as an alternative gate dielectric based on structural and electrical characteristics. Results show a dielectric constant of 225 and loss factor of 0.03 at 100 kHz. At 40 fC/μm2 and 3.2 fF/μm2 the charge storage density and capacitance density are good enough for DRAM applications. The leakage characteristics do not vary even after exposure to fields as high as 350 kV for 2 h. Leakage current was observed to display an ohmic conduction in the low voltage region (upto 8 V) and bulk controlled space charge limited conduction in the high field regions (> 8 V).