Layer-by-layer growth of silicon nitride films by NH3 and SiH4

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Res. Inst. of Elec. Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan [1 ]
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J Phy IV JP | / 8卷 / Pr8-333 - Pr8-340期
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