Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures. The effect of a pulse metalorganic flow

被引：0
|
作者：
机构：
来源：
| 1600年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE-GAAS MULTILAYERED STRUCTURES
    FUNATO, M
    ISHII, M
    MURAWALA, PA
    TSUJI, O
    FUJITA, S
    FUJITA, S
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 543 - 548
  • [42] Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy
    Takano, Y
    Sasaki, T
    Nagaki, Y
    Kuwahara, K
    Fuke, S
    Imai, T
    JOURNAL OF CRYSTAL GROWTH, 1996, 169 (04) : 621 - 624
  • [43] METALORGANIC VAPOR-PHASE HETEROEPITAXIAL GROWTH OF (AL)GAAS ON INP FOR DEVICE APPLICATIONS
    DEMEESTER, P
    ACKAERT, A
    MOERMAN, I
    BAETS, R
    LAGASSE, P
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 940 - 941
  • [44] ANALYSIS OF GROWTH-CONDITIONS FOR THE DEPOSITION OF MONOLAYERS OF GAINAS, GAAS AND INAS IN INP BY LP-MOVPE
    SEIFERT, W
    DEPPERT, K
    FORNELL, JO
    LIU, X
    NILSSON, S
    PISTOL, ME
    SAMUELSON, L
    JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 531 - 535
  • [45] MOCVD Growth and Device Characterization of InP/GaAsSb/InP DHBTs with a GaAs Spacer
    Hoshi, Takuya
    Sugiyama, Hiroki
    Yokoyama, Haruki
    Kashio, Norihide
    Kurishima, Kenji
    Ida, Minoru
    Matsuzaki, Hideaki
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [46] INTERFACIAL PROPERTIES OF VERY THIN GAINAS/INP QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    STREUBEL, K
    HARLE, V
    SCHOLZ, F
    BODE, M
    GRUNDMANN, M
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3300 - 3306
  • [47] Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition
    Zhang, XB
    Heller, RD
    Noh, MS
    Dupuis, RD
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 476 - 478
  • [48] MBE GROWTH AND MATERIAL AND DEVICE CHARACTERIZATION OF ALINAS/GAINAS MODFETS ON A GAAS SUBSTRATE
    SCHAFF, WJ
    CHEN, YK
    EASTMAN, LF
    KAVANAUGH, KL
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A21 - A22
  • [49] GROWTH AND CHARACTERIZATION OF (111)ORIENTED GAINAS GAAS STRAINED-LAYER SUPERLATTICES
    BEERY, JG
    LAURICH, BK
    MAGGIORE, CJ
    SMITH, DL
    ELCESS, K
    FONSTAD, CG
    MAILHIOT, C
    APPLIED PHYSICS LETTERS, 1989, 54 (03) : 233 - 235
  • [50] Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires
    Bhunia, S
    Kawamura, T
    Watanabe, Y
    Fujikawa, S
    Tokushima, K
    APPLIED PHYSICS LETTERS, 2003, 83 (16) : 3371 - 3373
12345