Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures. The effect of a pulse metalorganic flow

被引:0
|
作者
机构
来源
| 1600年 / 71期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH TECHNIQUE OF GAALAS/GAAS DOUBLE HETEROSTRUCTURES FOR PHOTOCATHODES
    HU, JX
    PENG, RW
    JOURNAL OF CRYSTAL GROWTH, 1995, 151 (1-2) : 26 - 30
  • [32] THE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOVPE GAAS AND GAALAS
    NAKANISI, T
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 282 - 294
  • [34] GROWTH AND CHARACTERIZATION OF INP/GAAS EPILAYERS ON SI SUBSTRATES BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    LEE, MK
    HUANG, KC
    WUU, DS
    TUNG, HH
    YU, KY
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 539 - 542
  • [35] Growth by selective area epitaxy on patterned substrates and characterization of GaInAs/InP nanostructures
    Roth, AP
    Finnie, P
    Charbonneau, S
    Lacelle, C
    Guerini, C
    Fraser, J
    Buchanan, M
    Feng, Y
    MICROELECTRONICS JOURNAL, 1997, 28 (8-10) : 909 - 913
  • [36] MOVPE GROWTH OF GAAS GAALAS STRUCTURES ON GAAS AND GE SUBSTRATES FOR SOLAR-CELL DEVICES
    FLORES, C
    BOLLANI, B
    CAMPESATO, R
    PALETTA, F
    PASSONI, D
    TIMO, G
    TOSONI, A
    SOLAR ENERGY MATERIALS, 1991, 23 (2-4): : 356 - 362
  • [37] Effect of channel thickness on linearity of double pulse doped AlInAs/GaInAs/InP HEMTs
    Hur, KY
    Hetzler, KT
    McTaggart, RA
    Lemonias, PJ
    Hoke, WE
    ELECTRONICS LETTERS, 1997, 33 (04) : 331 - 332
  • [38] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF GAAS
    BLAAUW, C
    MINER, C
    EMMERSTORFER, B
    SPRINGTHORPE, AJ
    GALLANT, M
    CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 664 - 669
  • [39] EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM
    SEKI, H
    KINOSHITA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) : 1142 - +
  • [40] Growth of AlInAs/GaInAs MODFET structures on InP substrates by molecular beam epitaxy(MBE)
    Wu, YB
    Chen, H
    Shang, YH
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1348 - 1351