Isotropic/anisotropic selective epitaxial growth of Si on local oxidation of silicon (LOCOS) patterned Si (100) substrate by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)

被引：0
|
作者：
机构：
[1] Lim, Seung-Hyun
[2] Song, Sukchan
[3] Park, Tai-Su
[4] Lee, Seung-Yoon
[5] Lee, Gun-Do
[6] Lee, Jong-Ho
[7] Yoon, Euijoon
来源：
Lim, S.-H. (eyoon@snu.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
23
引用
收藏
相关论文
共 40 条
  • [1] Isotropic/anisotropic selective epitaxial growth of Si on local oxidation of silicon (LOCOS) patterned Si(100) substrate by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)
    Lim, SH
    Song, SC
    Park, TS
    Lee, SY
    Lee, GD
    Lee, JH
    Yoon, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6B): : 3966 - 3970
  • [2] Facet evolution in selective epitaxial growth of Si by cold-wall ultrahigh vacuum chemical vapor deposition
    Lim, SH
    Song, S
    Lee, GD
    Yoon, EJ
    Lee, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 682 - 687
  • [3] Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition
    Lim, SH
    Song, S
    Yoon, E
    Lee, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 275 - 282
  • [4] Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windows
    Halbwax, M.
    Nguyen, Lam H.
    Fossard, Frederic
    Le Roux, X.
    Mathet, V.
    Yam, V.
    Cao, Dao Tran
    Bouchier, D.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 460 - 464
  • [5] FACET FORMATION MECHANISM OF SILICON SELECTIVE EPITAXIAL LAYER BY SI ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
    AOYAMA, T
    IKARASHI, T
    MIYANAGA, K
    TATSUMI, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 349 - 354
  • [6] HETEROEXPITAXIAL GROWTH OF GE ON (100)SI BY ULTRAHIGH-VACUUM, CHEMICAL VAPOR-DEPOSITION
    CUNNINGHAM, B
    CHU, JO
    AKBAR, S
    APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3574 - 3576
  • [7] Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
    Yuh, HK
    Park, JW
    Lim, SH
    Hwang, KH
    Yoon, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (02): : 323 - 326
  • [8] SELECTIVE EPITAXIAL-GROWTH OF SI1-X GEX BY COLD-WALL ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION USING DISILANE AND GERMANE
    HIROI, M
    TATSUMI, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 279 - 283
  • [9] Epitaxial Growth of Silicon Films on SiO2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition
    Duan, Chunyan
    Deng, Youjun
    Ai, Bin
    Liu, Chao
    Zhuang, Lin
    Shen, Hui
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
  • [10] Epitaxial growth of silicon films on SiO2 patterned Si(100) substrates by atmospheric pressure chemical vapor deposition
    State Key Laboratory of Optoelectronic Materials and Technologies, Institute for Solar Energy Systems, Sun Yat-Sen University, Guangzhou 510275, China
    Jpn. J. Appl. Phys., 9 PART3
1234