Plasma immersion ion implantation model including multiple charge state

被引：0

作者：

机构：

来源：

J Appl Phys | / 7卷 / 3432期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] Progress in direct-current plasma immersion ion implantation and recent applications of plasma immersion ion implantation and deposition
Chu, Paul K.
[J]. SURFACE & COATINGS TECHNOLOGY, 2013, 229 : 2 - 11
[22] Flexible system for multiple plasma immersion ion implantation-deposition processes
Tian, XB
Fu, RKY
Chu, PK
Anders, A
Gong, CZ
Yang, SQ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (12) : 5137 - 5140
[23] Semiconductor processing by plasma immersion ion implantation
Ensinger, W
[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 258 - 268
[24] Plasma immersion ion implantation with dielectric substrates
Linder, BP
Cheung, NW
[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1996, 24 (06) : 1383 - 1388
[25] Plasma immersion ion implantation for silicon processing
Yankov, RA
Mändl, S
[J]. ANNALEN DER PHYSIK, 2001, 10 (04) : 279 - 298
[26] Modification of metals by plasma immersion ion implantation
Maendl, Stephan
Manova, Darina
[J]. SURFACE & COATINGS TECHNOLOGY, 2019, 365 : 83 - 93
[27] Sheath dynamics in plasma immersion ion implantation
Brutscher, J
Gunzel, R
Moller, W
[J]. PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (01) : 54 - 60
[28] Plasma immersion ion implantation for silicon processing
Yankov, Rossen A.
Mändl, Stephan
[J]. Annalen der Physik (Leipzig), 2001, 10 (04): : 279 - 298
[29] Semiconductor applications of plasma immersion ion implantation
Chu, PK
[J]. PLASMA PHYSICS AND CONTROLLED FUSION, 2003, 45 (05) : 555 - 570
[30] Plasma immersion ion implantation for semiconductor processing
Cheung, NW
[J]. MATERIALS CHEMISTRY AND PHYSICS, 1996, 46 (2-3) : 132 - 139

← 1 2 3 4 5 →