Junction capacitance models of SiGe HBT

被引：0
|
作者：
Lu, Yi [1 ]
Zhang, He-Ming [1 ]
Dai, Xian-Ying [1 ]
Hu, Hui-Yong [1 ]
Shu, Bin [1 ]
机构：
[1] Inst. of Microelectronics, Xidian Univ., Xi'an 710071, China
来源：
Wuli Xuebao/Acta Physica Sinica | 2004年 / 53卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when considering of their junction capacitance. Based on the analysis and study of the carrier transport of SiGe HBT, emitter junction capacitance model is developed by considering the carrier distribution, and the collector junction capacitance model is also established for different current densities including base extending effect. The junction capacitance models are used to simulate frequency characteristics. The results of simulation show good agreements with the experimental data.
引用
收藏
页码：3239 / 3244
相关论文
共 50 条
  • [31] Analytical current-voltage relations for compact SiGe HBT models - Part II: Application to practical HBT's and parameter extraction
    Friedrich, M
    Rein, HM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1394 - 1401
  • [32] Improvement on Frequency Performance of SOI SiGe HBT
    DAI Guang-hao
    Semiconductor Photonics and Technology, 2006, (03) : 150 - 152
  • [33] SiGe HBT器件的研究设计
    米保良
    吴国增
    半导体技术, 2010, 35 (01) : 58 - 62
  • [34] Fabrication of SiGe HBT integrated SOI CMOS
    Zhang, Jing
    Tang, Zhaohuan
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [35] Configuration dependence of SiGe HBT linearity characteristics
    Qin, Guoxuan
    Jiang, Ningyue
    Wang, Guogong
    Ma, Zhenqiang
    2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 107 - +
  • [36] 超高速Si/SiGe HBT
    戴玲华
    半导体情报, 1993, (02) : 64 - 65
  • [37] A 60 GHz SiGe HBT Chip Set
    Boeck, Georg
    Subramanian, Viswanathan
    Keusgen, Wilhelm
    Do, Van-Hoang
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 13 - +
  • [38] Evaluation of hot carrier effect of SiGe HBT
    Lin, Xiao-Ling
    Kong, Xue-Dong
    En, Yun-Fei
    Zhang, Xiao-Wen
    Yao, Ruo-He
    Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science), 2009, 37 (05): : 23 - 26
  • [39] Transistor noise in SiGe HBT RF technology
    Niu, GF
    Cressler, JD
    Jin, ZR
    Zhang, SM
    Juraver, JB
    Borgarino, M
    Plana, R
    Llopis, O
    Webster, C
    Joseph, AJ
    PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, : 207 - 210
  • [40] Quantification of Dopant Profiles in SiGe HBT Devices
    Jones, Eric J.
    Poplawsky, Jonathan
    Leonard, Donavan
    Chung, Keith
    Mercurio, Kevin
    Brabant, Paul
    Adam, Thomas
    Shea, Patrick B.
    Knight, Thomas
    2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2018, : 255 - 258
12345