CARRIER DENSITY FLUCTUATIONS DUE TO DISTRIBUTION OF TRAPS IN SEMICONDUCTORS.

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作者：
SATO, HISANAO
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来源：
| 1982年 / V 21卷 / N 7期
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摘要：
A FORMULA IS GIVEN FOR THE SPECTRAL DENSITY OF THE FREE ELECTRON NUMBER FLUCTUATIONS CAUSED BY THE DISTRIBUTION OF TRAPS IN THE BAND GAP. THE EFFECTS ON THE SPECTRAL DENSITY OF VARIOUS TRAP DISTRIBUTIONS ARE STUDIED. IT IS FOUND THAT LARGETRAP DENSITIES CHANGE NOT ONLY THE MAGNITUDE, BUT ALSO THE FREQUENCY DEPENDENCE OF THE SPECTRAL DENSITY. THE LINEAR RESPONSE OF THE CARRIER DENSITY TO EXTERNAL EXCITATIONS IS BRIEFLY DISCUSSED TO SHOW THE RELATION BETWEEN THE RESPONSE AND THE FLUCTUATION.
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页码：1014 / 1016
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