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- [21] Controlled formation of misfit dislocations for heteroepitaxial growth of GaAs on (100) Si by migration-enhanced epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
- [23] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1140 - L1143
- [24] Thermal annealing effect of AlAs-GaAs superlattice grown at 300°C by migration-enhanced epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (11): : 2015 - 2018
- [27] Low-Temperature grown Gallium Arsenide on Silicon by using Migration-Enhanced Epitaxy 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 0264 - 0267