Si/Ge/SI (001) heteroepitaxy using surfactants

被引：0

作者：

Sakamoto, K.

Matsuhata, H.

Kyoya, K.

Miki, K.

Sakamoto, T.

机构：

来源：

Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory | 1993年 / 57卷 / 07期

关键词：

Adsorption; -; Desorption; Germanium; Silicon;

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学科分类号：

摘要：

Effect of surfactants on growth of Si/Ge/Si heterostructure has been investigated by means of RHEED, TEM,and SIMS. An Sb or Bi layer adsorbed on the surface prevents the 3D islanding of Ge and reduces the intermixing of Si and Ge caused by surface segregation. A major effect of a surfactant is to reduce the surface mobility of the growing species. Among the elements that is an effective surfactant for the growth of Si/Ge system, Bi is an excellent one realizing small self-incorporation and controllable adsorption and desorption on Si(001).

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页码：61 / 70