1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

被引:0
|
作者
Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan [1 ]
机构
来源
IEEE Photonics Technol Lett | / 10卷 / 1205-1207期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
    El-Jaroudi, R. H.
    McNicholas, K. M.
    Briggs, A. F.
    Sifferman, S. D.
    Nordin, L.
    Bank, S. R.
    APPLIED PHYSICS LETTERS, 2020, 117 (02)
  • [42] Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
    Park, G
    Huffaker, DL
    Zou, Z
    Shchekin, OB
    Deppe, DG
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (03) : 301 - 303
  • [43] High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature
    Mukai, K
    Nakata, Y
    Otsubo, K
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3349 - 3351
  • [44] Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
    Su, Xiang-Bin
    Ding, Ying
    Ma, Ben
    Zhang, Ke-Lu
    Chen, Ze-Sheng
    Li, Jing-Lun
    Cui, Xiao-Ran
    Xu, Ying-Qiang
    Ni, Hai-Qiao
    Niu, Zhi-Chuan
    NANOSCALE RESEARCH LETTERS, 2018, 13
  • [45] Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
    Xiang-Bin Su
    Ying Ding
    Ben Ma
    Ke-Lu Zhang
    Ze-Sheng Chen
    Jing-Lun Li
    Xiao-Ran Cui
    Ying-Qiang Xu
    Hai-Qiao Ni
    Zhi-Chuan Niu
    Nanoscale Research Letters, 2018, 13
  • [46] Threshold current density of 1.3-μm GaAsSb/GaInAs/GaAs type-II trilayer quantum well lasers on GaAs substrates
    Park, Seoung-Hwan
    Kim, Hwa-Min
    Kim, Jong-Jae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (04) : 1018 - 1021
  • [47] Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots
    Farrer, I
    Murphy, MJ
    Ritchie, DA
    Shields, AJ
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 771 - 776
  • [48] 1.3 μm room temperature emission from InAs/GaAs self-assembled quantum dots
    Murray, Ray
    Childs, David
    Malik, Surama
    Siverns, Philip
    Roberts, Christine
    Hartmann, Jean-Michel
    Stavrinou, Paul
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (1 B): : 528 - 530
  • [49] 1.3 μm room temperature emission from InAs/GaAs self-assembled quantum dots
    Murray, R
    Childs, D
    Malik, S
    Siverns, P
    Roberts, C
    Hartmann, JM
    Stavrinou, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 528 - 530
  • [50] INGAAS/GAAS STRAINED QUANTUM WELLS WITH A 1.3-MU-M BAND EDGE AT ROOM-TEMPERATURE
    MELMAN, P
    ELMAN, B
    JAGANNATH, C
    KOTELES, ES
    SILLETTI, A
    DUGGER, D
    APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1436 - 1438