EFFECTS OF APPLIED AND INTERNAL STRAIN ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON.

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作者：
Spear, W.E. [1 ]
Heintze, M. [1 ]
机构：
[1] Univ of Dundee, Dundee, Scotl, Univ of Dundee, Dundee, Scotl
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 54卷 / 05期
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23
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页码：343 / 358
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