GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD.

被引：0
|
作者：
Osaka, Jiro [1 ]
Kobayashi, Takashi [1 ]
Nakanishi, Hideo [1 ]
机构：
[1] Electrical Communication Lab, Device, Material Section, Atsugi, Jpn, Electrical Communication Lab, Device Material Section, Atsugi, Jpn
来源：
Reports of the Electrical Communication Laboratory | 1985年 / 33卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：146 / 155
相关论文
共 50 条
  • [31] Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues
    Markov, AV
    Mezhennyi, MV
    Polyakov, AY
    Smirnov, NB
    Govorkov, AV
    Eremin, VK
    Verbitskaya, EM
    Gavrin, VN
    Kozlova, YP
    Veretenkin, YP
    Bowles, TJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (01): : 14 - 24
  • [32] UNIFORMITY OF ANNEALED AND BULK-QUENCHED UNDOPED, SEMI-INSULATING, LEC GAAS
    CLARK, S
    STIRLAND, DJ
    BROZEL, MR
    SMITH, M
    WARWICK, CA
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 31 - 36
  • [33] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
    TAJIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229
  • [34] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GaAs WAFERS.
    Yasuami, Shigeru
    Mikami, Hitoshi
    Hojo, Akimichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (10): : 1567 - 1569
  • [35] GROWTH OF 4-INCH DIAMETER SEMI-INSULATING LEC GAAS WITH APPLIED MAGNETIC-FIELD
    OZAWA, S
    NAKAYAMA, H
    SHIINA, Y
    OHASHI, E
    KIKUTA, T
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 343 - 346
  • [36] ELLIPSOMETRY AND REFLECTANCE OF ETCHED (100) SURFACES OF UNDOPED, SEMI-INSULATING LEC GAAS
    HOSHINO, T
    MORITANI, A
    NAKAI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L250 - L253
  • [37] DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION
    DINDO, S
    ABDELMOTALEB, I
    LOWE, K
    TANG, W
    YOUNG, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2673 - 2677
  • [38] GROWTH OF 4-INCH DIAMETER SEMI-INSULATING LEC GAAS WITH APPLIED MAGNETIC-FIELD
    OZAWA, S
    NAKAYAMA, H
    SHIINA, Y
    OHASHI, E
    KIKUTA, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 343 - 346
  • [39] Crystal growth of undoped semi-insulating CdTe
    Zha, M
    Görög, T
    Zappettini, A
    Bissoli, F
    Zanotti, L
    Paorici, C
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (01) : 184 - 189
  • [40] INSITU PURIFICATION GROWTH OF UNDOPED SEMI-INSULATING GAAS SINGLE-CRYSTALS
    FUKUDA, T
    TERASHIMA, K
    NAKAJIMA, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 23 - 29
12345