GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD.

被引：0
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作者：
Osaka, Jiro [1 ]
Kobayashi, Takashi [1 ]
Nakanishi, Hideo [1 ]
机构：
[1] Electrical Communication Lab, Device, Material Section, Atsugi, Jpn, Electrical Communication Lab, Device Material Section, Atsugi, Jpn
来源：
Reports of the Electrical Communication Laboratory | 1985年 / 33卷 / 01期
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：146 / 155
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