TRIPYRAMID GROWTH IN EPITAXIAL GERMANIUM LAYERS.

被引:0
|
作者
Inoue, Morio
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
19
引用
收藏
页码:447 / 454
相关论文
共 50 条
  • [21] EPITAXIAL-GROWTH OF GERMANIUM ON GERMANIUM IN AUTOEMISSION MICROSCOPE
    IVANOV, VG
    KRISTALLOGRAFIYA, 1972, 17 (05): : 1085 - +
  • [22] OPTICAL FOUR-WAVE MIXING SPECTROSCOPY OF PbSe EPITAXIAL LAYERS.
    Pascher, H.
    Grisar, R.
    Bauer, G.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 398 - 400
  • [23] BEHAVIOR OF EPITAXIAL FERRITE-GARNET FILMS WITH INVERSION SURFACE LAYERS.
    Lisovskii, F.V.
    Mansvetova, E.G.
    Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (04): : 249 - 257
  • [24] EPITAXIAL DEPOSITION OF SILICON AND GERMANIUM LAYERS BY CHLORIDE REDUCTION
    CAVE, EF
    CZORNY, BR
    RCA REVIEW, 1963, 24 (04): : 523 - 545
  • [25] GROWING OF EPITAXIAL GERMANIUM LAYERS ON RECTANGULAR FORM SUBLAYERS
    VERVYKA, AV
    ZHEMCHUZHINA, EA
    KUZNETSOV, AS
    LEVINZON, DI
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1973, 37 (11): : 2310 - 2312
  • [26] EPITAXIAL GROWTH OF SILICON AND GERMANIUM (I)
    LI, CH
    PHYSICA STATUS SOLIDI, 1966, 15 (01): : 3 - &
  • [27] Epitaxial growth of InP nanowires on germanium
    Erik P. A. M. Bakkers
    Jorden A. van Dam
    Silvano De Franceschi
    Leo P. Kouwenhoven
    Monja Kaiser
    Marcel Verheijen
    Harry Wondergem
    Paul van der Sluis
    Nature Materials, 2004, 3 : 769 - 773
  • [28] Epitaxial growth and electrical characterization of germanium
    Bosi, M.
    Attolini, G.
    Ferrari, C.
    Frigeri, C.
    Calicchio, M.
    Gombia, E.
    Asar, T.
    Boyali, E.
    Aydemir, U.
    Ozcelik, S.
    Kasap, M.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 46 (08) : 813 - 817
  • [29] EPITAXIAL GROWTH OF SILICON AND GERMANIUM (2)
    LI, CH
    PHYSICA STATUS SOLIDI, 1966, 15 (02): : 419 - +
  • [30] THE KINETICS OF EPITAXIAL VAPOR GROWTH OF GERMANIUM
    KYLE, N
    GROSSMAN, JJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (08) : C184 - C184