TRIPYRAMID GROWTH IN EPITAXIAL GERMANIUM LAYERS.

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作者：

Inoue, Morio

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National Technical Report (Matsushita Electric Industry Company) | 1972年 / 18卷 / 04期

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页码：447 / 454

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[1] TRIPYRAMID GROWTH IN EPITAXIAL GERMANIUM LAYERS
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[9] CRYSTALLINE DEFECTS IN SELECTIVELY EPITAXIAL SILICON LAYERS.
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[10] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
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