Phase coherence and temperature dependence of current-voltage characteristics at low-current and low-voltage region of double-barrier resonant-tunneling diode

被引：0

作者：

Machida, Nobuya ^{[1
]}

Nagatsuka, Hiroyuki ^{[1
]}

Nagase, Masanori ^{[1
]}

Furuya, Kazuhito ^{[1
]}

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 7 A期

关键词：

Double barrier resonant tunneling diode - Electron phase coherence - Hot electrons - Low-current region - Low-voltage region - Temperature dependence;

D O I：

10.1143/jjap.41.4469

中图分类号：

学科分类号：

摘要：

引用

页码：4469 / 4473

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