Phase coherence and temperature dependence of current-voltage characteristics at low-current and low-voltage region of double-barrier resonant-tunneling diode

被引：0
|
作者：
Machida, Nobuya [1 ]
Nagatsuka, Hiroyuki [1 ]
Nagase, Masanori [1 ]
Furuya, Kazuhito [1 ]
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 7 A期
关键词：
Double barrier resonant tunneling diode - Electron phase coherence - Hot electrons - Low-current region - Low-voltage region - Temperature dependence;
D O I：
10.1143/jjap.41.4469
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4469 / 4473
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