New method for soft-error mapping in dynamic random access memory using nuclear microprobe

被引:0
|
作者
Sayama, Hirokazu [1 ]
Hara, Shigenori [1 ]
Kimura, Hiroshi [1 ]
Ohno, Yoshikazu [1 ]
Satoh, Shinichi [1 ]
Takai, Mikio [1 ]
机构
[1] Osaka Univ, Osaka, Japan
关键词
5;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:4541 / 4544
相关论文
共 50 条
  • [1] NEW METHOD FOR SOFT-ERROR MAPPING IN DYNAMIC RANDOM-ACCESS MEMORY USING NUCLEAR MICROPROBE
    SAYAMA, H
    HARA, S
    KIMURA, H
    OHNO, Y
    SATOH, S
    TAKAI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4541 - 4544
  • [2] A soft-error resilient low power static random access memory cell
    Sachdeva, Ashish
    Tomar, V. K.
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2021, 109 (01) : 187 - 211
  • [3] A soft-error resilient low power static random access memory cell
    Ashish Sachdeva
    V. K. Tomar
    Analog Integrated Circuits and Signal Processing, 2021, 109 : 187 - 211
  • [4] SOFT-ERROR IMMUNITY EVALUATION OF DRAM USING HIGH-ENERGY NUCLEAR MICROPROBE
    SAYAMA, H
    HARA, S
    ANDOH, H
    KIMURA, H
    OHNO, Y
    SATOH, S
    TAKAI, M
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 213 - 216
  • [5] SOFT ERROR SUSCEPTIBILITY MAPPING OF DRAMS USING A HIGH-ENERGY NUCLEAR MICROPROBE
    SAYAMA, H
    KIMURA, H
    OHNO, Y
    SATOH, S
    TAKAI, M
    MICROELECTRONIC ENGINEERING, 1993, 20 (04) : 329 - 338
  • [6] Soft-error tolerance and energy consumption evaluation of embedded computer with magnetic random access memory in practical systems using computer simulations
    Nebashi, Ryusuke
    Sakimura, Noboru
    Sugibayashi, Tadahiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (08)
  • [7] IDENTIFICATION OF SOFT-ERROR SENSITIVE JUNCTION IN SRAMS USING A SINGLE-ION MICROPROBE
    MATSUKAWA, T
    KISHIDA, A
    KOH, M
    HARA, K
    HORITA, K
    GOTO, M
    MATSUDA, S
    KUBOYAMA, S
    OHDOMARI, I
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (06) : 199 - 201
  • [8] Well structure by high-energy boron implantation for soft-error reduction in dynamic random access memories (DRAMs)
    Kishimoto, T
    Park, YK
    Takai, M
    Ohno, Y
    Sonoda, K
    Sayama, H
    Nishimura, T
    Kinomura, A
    Horino, Y
    Fujii, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6899 - 6902
  • [9] Well structure by high-energy boron implantation for soft-error reduction in dynamic random access memories (DRAMs)
    Osaka Univ, Osaka, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (6899-6902):
  • [10] METHOD TO REDUCE SOFT ERROR RATE IN BIPOLAR RANDOM-ACCESS MEMORY CELLS.
    Anon
    IBM technical disclosure bulletin, 1986, 29 (04):