FIELD-EFFECT TRANSISTOR.

被引:0
|
作者
Anon
机构
来源
| 1600年 / 28期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
TRANSISTORS, FIELD EFFECT
引用
收藏
相关论文
共 50 条
  • [21] A UNIPOLAR FIELD-EFFECT TRANSISTOR
    SHOCKLEY, W
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
  • [22] AMBIPOLAR FIELD-EFFECT TRANSISTOR
    PFLEIDERER, H
    KUSIAN, W
    SOLID-STATE ELECTRONICS, 1986, 29 (03) : 317 - 319
  • [23] Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
    Natori, K
    Kimura, Y
    Shimizu, T
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [24] ALLOWING FOR THE PHENOMENON OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN A SIMPLE MODEL OF A GALLIUM ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR.
    Popov, A.R.
    Rizunenko, V.I.
    Kopylov, A.F.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1987, 30 (10): : 97 - 98
  • [25] Design and Implementation of ALU Using Graphene Nanoribbon Field-Effect Transistor and Fin Field-Effect Transistor
    Florance, D. Rebecca
    Prabhakar, B.
    Mishra, Manoj Kumar
    JOURNAL OF NANOMATERIALS, 2022, 2022
  • [26] NEW MICROWAVE AMPLITUDE LIMITER USING GaAs FIELD EFFECT TRANSISTOR.
    Fukuda, Sachiro
    Kitamura, Mikio
    Ara, Youichi
    Haga, Isao
    1977, : 240 - 242
  • [27] Theory of the organic field-effect transistor
    Horowitz, G
    Hajlaoui, R
    Bourguiga, R
    Hajlaoui, M
    SYNTHETIC METALS, 1999, 101 (1-3) : 401 - 404
  • [28] Metal nanoparticle field-effect transistor
    1600, American Institute of Physics Inc. (114):
  • [29] A TIN OXIDE FIELD-EFFECT TRANSISTOR
    KLASENS, HA
    KOELMANS, H
    SOLID-STATE ELECTRONICS, 1964, 7 (09) : 701 - 702
  • [30] A ferroelectric semiconductor field-effect transistor
    Mengwei Si
    Atanu K. Saha
    Shengjie Gao
    Gang Qiu
    Jingkai Qin
    Yuqin Duan
    Jie Jian
    Chang Niu
    Haiyan Wang
    Wenzhuo Wu
    Sumeet K. Gupta
    Peide D. Ye
    Nature Electronics, 2019, 2 : 580 - 586