High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

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Univ of Michigan, Ann Arbor, United States [1 ]
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IEEE Electron Device Lett | / 11卷 / 553-555期
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Number:; -; Acronym:; URI; Sponsor: University of Rhode Island; MURI; Sponsor: Multidisciplinary University Research Initiative;
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