DEPFET pixel bioscope

被引：0
|
作者：
Neeser, W. [1 ]
Boecker, M. [1 ]
Buchholz, P. [1 ]
Fischer, P. [1 ]
Holl, P. [1 ]
Kemmer, J. [1 ]
Klein, P. [1 ]
Koch, H. [1 ]
Loecker, M. [1 ]
Lutz, G. [1 ]
Matthaey, H. [1 ]
Strueder, L. [1 ]
Trimpl, M. [1 ]
Ulrici, J. [1 ]
Wermes, N. [1 ]
机构：
[1] Universitaet Bonn, Bonn, Germany
来源：
IEEE Transactions on Nuclear Science | 2000年 / 47卷 / 3 III期
关键词：
Junction gate field effect transistors - Radiation detectors - Radiography - Semiconducting silicon - Substrates - Temperature - Tritium - X rays;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The DEPFET pixel Bioscope system based on a DEPFET pixel matrix provides good spatial and energy resolution in real-time digital autoradiography. Due to its very low noise and a thin entrance window the online detection of tritium without vacuum or cooling is demonstrated for the first time. To achieve this milestone a p-channel junction field effect transistor on a fully depleted high ohmic silicon substrate (DEPFET) is used as unit cell for pixel detectors providing an excellent noise performance of 158eV FWHM at 6 keV (12 e ENC) at room temperature (300 K). 64 × 64 DEPFET pixel matrices with square (50 μm × 50 μm) or hexagonal (50 μm × 42 μm) pixels have been developed and operated successfully. First measurements result in a homogeneous charge collection efficiency on the whole matrix area and a good linearity in the X-ray range from 5 keV to 60 keV. First images taken with the square and the hexagonal pixel matrices using an 55Fe-source as well as a 'proof of principle' experiment for online 3H-detection are presented and discussed.
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页码：1246 / 1250
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