Schottky barrier height of Ti on strained layer Si/Si1-xGex films

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作者：
Islam, Md.N. [1 ]
Basa, D.K. [1 ]
Mukhopadhyay, M. [1 ]
Bera, L.K. [1 ]
Ray, S.K. [1 ]
Banerjee, H.D. [1 ]
Maiti, C.K. [1 ]
机构：
[1] Semiconductor Complex Ltd, Nagar, India
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| / IETE, New Delhi, India卷 / 43期
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