InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates

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Korea Inst of Science and Technology, Seoul, Korea, Republic of ^{[1
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Appl Surf Sci | / 690-694期

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This researchw as supportedi n part by the Korea Science and Engineering Foundation (KOSEF) through SPRC; and in part by KIST-2000 project through contact No. 2VOO152;

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