INFLUENCE OF HYDROGEN ON BROKEN BONDS IN SILICON.

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作者：
Grekhov, A.M.
Gun'ko, V.M.
Klapchenko, G.M.
Tsyashchenko, Yu.P.
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来源：
Soviet physics. Semiconductors | 1983年 / 17卷 / 10期
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HYDROGEN;
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摘要：
An investigation was carried out on the contribution of broken bonds to the density of states of silicon atom clusters and also the process of 'heating' of a defect with broken bonds by saturation with hydrogen.
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页码：1186 / 1187
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