OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments

被引:0
|
作者
IMC, P. O. Box 1084, S-164 25 Stockholm-Kista, Sweden [1 ]
不详 [2 ]
机构
来源
Diamond Relat. Mat. | / 10卷 / 1396-1399期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
5
引用
收藏
相关论文
共 50 条
  • [1] OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments
    Frischholz, M
    Rottner, K
    Schoner, A
    Dalibor, T
    Pensl, G
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1396 - 1399
  • [2] OBIC measurements on 6H-SiC Schottky diodes
    Rottner, K
    Schoner, A
    Frischholz, M
    Helbig, R
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 51 - 56
  • [3] Schottky barriers on 6H-SiC
    Fröjdh, C
    Thungström, G
    Nilsson, HE
    Petersson, CS
    PHYSICA SCRIPTA, 1999, T79 : 297 - 302
  • [4] Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
    Roccaforte, F
    La Via, F
    Raineri, V
    Musumeci, P
    Calcagno, L
    Condorelli, GG
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 77 (06): : 827 - 833
  • [5] Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
    F. Roccaforte
    F. La Via
    V. Raineri
    P. Musumeci
    L. Calcagno
    G.G. Condorelli
    Applied Physics A, 2003, 77 : 827 - 833
  • [6] ANNEALING OF SCHOTTKY CONTACTS ON 6H-SiC
    Machac, Petr
    Orna, Martin
    Cichon, Stanislav
    ELECTRONIC DEVICES AND SYSTEMS: IMAPS CS INTERNATIONAL CONFERENCE 2011, 2011, : 29 - 32
  • [7] Radiation damage on 6H-SiC Schottky diodes
    Nishijima, T
    Hearne, SM
    Jamieson, DN
    Ohshima, T
    Lee, KK
    Itoh, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 210 : 196 - 200
  • [8] CVD of tungsten schottky diodes to 6H-SiC
    Lundberg, N
    Tagtstrom, P
    Jansson, U
    Ostling, M
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 677 - 680
  • [9] Surface analysis of 6H-SiC
    vanElsbergen, V
    Kampen, TU
    Monch, W
    SURFACE SCIENCE, 1996, 365 (02) : 443 - 452
  • [10] Studies of 6H-SiC devices
    Wang, SR
    Liu, ZL
    CURRENT APPLIED PHYSICS, 2002, 2 (05) : 393 - 399