Non-contact atomic force microscopy observation on GaAs(110) surface with tip-induced relaxation

被引：0

作者：

Uehara, Nobutomo ^{[1
]}

Hosoi, Hirotaka ^{[2
]}

Sueoka, Kazuhisa ^{[1
]}

Mukasa, Koichi ^{[1
]}

机构：

[1] Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan

[2] Innovation Plaza Hokkaido, Japan Science and Technology Agency, Kita-I9 Nishi-11, Kita-ku, Sapporo 060-0819, Japan

来源：

| 1600年 / Japan Society of Applied Physics卷 / 43期

关键词：

Atomic force microscopy - Chemical vapor deposition - Electric potential - Fluorescence - Natural frequencies - Surface treatment - Thermal effects - Ultraviolet radiation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigate the tip-sample dependence of atomically resolved non-contact atomic force microscopy (NC-AFM) images of a GaAs(110) surface taken with a tip that can resolve the tip-sample interaction originating from the dangling bonds of Ga atoms and the valence charge distribution around As atoms. Comparing the NC-AFM images taken with various tip-sample distances with a theoretical investigation of tip-sample interactions on the surface, the tip-sample interaction near the As atoms and Ga atoms are experimentally distinguished, and it is suggested that observed NC-AFM images reflect the tip induced surface relaxation.

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