Non-contact atomic force microscopy observation on GaAs(110) surface with tip-induced relaxation

被引：0
|
作者：
Uehara, Nobutomo [1 ]
Hosoi, Hirotaka [2 ]
Sueoka, Kazuhisa [1 ]
Mukasa, Koichi [1 ]
机构：
[1] Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
[2] Innovation Plaza Hokkaido, Japan Science and Technology Agency, Kita-I9 Nishi-11, Kita-ku, Sapporo 060-0819, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
Atomic force microscopy - Chemical vapor deposition - Electric potential - Fluorescence - Natural frequencies - Surface treatment - Thermal effects - Ultraviolet radiation;
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摘要：
We investigate the tip-sample dependence of atomically resolved non-contact atomic force microscopy (NC-AFM) images of a GaAs(110) surface taken with a tip that can resolve the tip-sample interaction originating from the dangling bonds of Ga atoms and the valence charge distribution around As atoms. Comparing the NC-AFM images taken with various tip-sample distances with a theoretical investigation of tip-sample interactions on the surface, the tip-sample interaction near the As atoms and Ga atoms are experimentally distinguished, and it is suggested that observed NC-AFM images reflect the tip induced surface relaxation.
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