ON THE GROWTH MODE OF OXIDE FILMS ON CLEAVED GaAs(110) SURFACES AT ROOM TEMPERATURE.

被引：0
|
作者：
Bartels, F. [1 ]
Moench, W. [1 ]
机构：
[1] Univ Duisburg, Duisburg, West Ger, Univ Duisburg, Duisburg, West Ger
来源：
Solid State Communications | 1986年 / 57卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：571 / 574
相关论文
共 50 条
  • [31] Growth mode transitions on GaAs(110) surface
    Holmes, DM
    Sudijono, JL
    Belk, JG
    Neave, JH
    Jones, TS
    Joyce, BA
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 645 - 648
  • [32] Images of cleaved GaAs(110) surfaces observed with a reflection optical second harmonic microscope
    Sano, H
    Shimizu, T
    Mizutani, G
    Ushioda, S
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1614 - 1619
  • [33] OXYGEN AND TEMPERATURE INDUCED MODIFICATION ON GAAS CLEAVED SURFACES AND GAAS METAL SCHOTTKY DIODES
    ISMAIL, A
    PALAU, JM
    LASSABATERE, L
    REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03): : 197 - 204
  • [34] COMPARISON OF LEED INTENSITY DATA FROM CHEMICALLY POLISHED AND CLEAVED GAAS(110)SURFACES
    MARK, P
    PIANETTA, P
    LINDAU, I
    SPICER, WE
    SURFACE SCIENCE, 1977, 69 (02) : 735 - 740
  • [35] ON THE ELECTRONIC-STRUCTURE OF CLEAVED GAAS(110) SURFACES EXPOSED TO FORMIC-ACID
    MATTERNKLOSSON, M
    DING, XM
    LUTH, H
    SPITZER, A
    SURFACE SCIENCE, 1983, 129 (01) : 1 - 8
  • [36] ELECTRONIC-STRUCTURE OF CLEAVED CLEAN AND OXYGEN-COVERED GAAS (110) SURFACES
    LUTH, H
    BUCHEL, M
    DORN, R
    LIEHR, M
    MATZ, R
    PHYSICAL REVIEW B, 1977, 15 (02): : 865 - 874
  • [37] ALKALI-METALS ADSORPTION-KINETICS ON SPUTTERED AND CLEAVED GAAS(110) SURFACES
    VALERI, S
    DIBONA, A
    SURFACE SCIENCE, 1991, 251 : 995 - 999
  • [38] CALORIMETRIC MEASUREMENTS OF THE INTERACTION OF HYDROGEN WITH FILMS OF LANTHANIDES AT ROOM TEMPERATURE.
    Boeva, O.A.
    Zhavoronkova, K.N.
    Smutek, M.
    Cerny, S.
    Journal of the less-common metals, 1986, 118 (01): : 1 - 6
  • [39] THE OXIDE FILMS FORMED ON COPPER SINGLE CRYSTAL SURFACES IN WATER .2. RATE OF GROWTH AT ROOM TEMPERATURE
    KRUGER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 503 - 509
  • [40] NONDISRUPTIVE OXIDE OVERLAYER GROWTH ON GAAS(110)
    KROLL, GH
    OHNO, TR
    WEAVER, JH
    APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2249 - 2251
12345