ON THE GROWTH MODE OF OXIDE FILMS ON CLEAVED GaAs(110) SURFACES AT ROOM TEMPERATURE.

被引：0

作者：

Bartels, F. ^{[1
]}

Moench, W. ^{[1
]}

机构：

[1] Univ Duisburg, Duisburg, West Ger, Univ Duisburg, Duisburg, West Ger

来源：

Solid State Communications | 1986年 / 57卷 / 08期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：571 / 574

共 50 条

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