Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices

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Department of Applied Physics, Chalmers University of Technology, Göteborg University, S 41296 Göteborg, Sweden [1 ]
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Fiz Nizk Temp | / 2卷 / 168-171期
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[41]   ELECTRON CURRENTS ACROSS METAL-SEMICONDUCTOR INTERFACES [J].
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