Thermoelectric properties of and dopant distribution in SiC thin films

被引：0
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作者：
Kawahara, Toshio [1 ]
Uchino, Hiroko [1 ]
Inai, Hiroshi [1 ]
Kato, Kazuhiko [1 ]
Okamoto, Yoichi [1 ]
Morimoto, Jun [1 ]
Miyakawa, Toru [2 ]
机构：
[1] Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan
[2] Department of Computer Science, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino 275-0016, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 08期
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页码：4852 / 4856
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