Interface trap and oxide charge generation under negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

被引：0

作者：

Zhu, Shiyang ^{[1
]}

Nakajima, Anri ^{[1
]}

Ohashi, Takuo ^{[2
]}

Miyake, Hideharu ^{[2
]}

机构：

[1] Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan

[2] Elpida Memory, Inc., 7-10 Yoshikawa-kogyo-danchi, Higashi-Hiroshima 739-0198, Japan

来源：

Journal of Applied Physics | 2005年 / 98卷 / 11期

关键词：

Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;

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摘要：

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