PLASMA-ASSISTED DEPOSITION OF ARSENIC SULFIDE FILM BY COEVAPORATION OF ARSENIC AND HYDROGEN SULFIDE.

被引：0

作者：

Nakamura, Shigeaki ^{[1
]}

Suita, Yoshikazu ^{[1
]}

Yamamoto, Yoshihiro ^{[1
]}

Hirano, Toshio ^{[1
]}

Horiguchi, Masakazu ^{[1
]}

Yoshioka, Shoji ^{[1
]}

机构：

[1] Takamatsu Natl Coll of Technology, Choku, Jpn, Takamatsu Natl Coll of Technology, Choku, Jpn

来源：

Chemistry Express | 1988年 / 3卷 / 08期

关键词：

ARSENIC - Evaporation - FILMS - Chemical Vapor Deposition - HYDROGEN SULFIDE - MICROSCOPIC EXAMINATION - Scanning Electron Microscopy - PLASMAS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A thin film of As-S was formed successively with layers of different chemical compositions on a slide glass at room temperature by changing the H//2S pressure, 0. 02-0. 12 torr. Arsenic was evaporated in plasma at a constant rate, 45mg/min. It was found by SEM, AES, and the scratch test that the film had two definite layers on the glass substrate and O diffusion between the layer and the substrate, which affected the adhesive strength.

引用

页码：451 / 454

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