Resistance of high power vertical DMOS-transistor functioning in thriode mode

被引:0
|
作者
Gudyma, Yu.V.
Zinger, Yu.I.
Likhobabin, N.P.
Politanskiy, L.F.
机构
来源
Mikroelektronika | 1991年 / 20卷 / 03期
关键词
3;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:244 / 247
相关论文
共 50 条
  • [41] A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR POWER TRANSISTOR
    WU, CY
    LEE, CS
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 78 - 80
  • [42] Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications
    Du, Jiangfeng
    Liu, Dong
    Liu, Yong
    Bai, Zhiyuan
    Jiang, Zhiguang
    Liu, Yang
    Yu, Qi
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 111 : 656 - 664
  • [43] A transistor-only power-efficient high-frequency voltage-mode stimulator for a multichannel system
    van Dongen, Marijn N.
    Serdijn, Wouter A.
    2013 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS), 2013, : 93 - 96
  • [44] Class-EM switching-mode tuned power amplifier -: High efficiency with slow-switching transistor
    Telegdy, A
    Molnár, B
    Sokal, NO
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (06) : 1662 - 1676
  • [45] High-power, low resistance, single-mode,multi-aperture VCSELs
    Tian, Si-Cong
    Mansoor, Ahamed
    Lindner, Julian
    Larisch, Gunter
    Bimberg, Dieter
    2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC), 2021,
  • [46] Influence of power dissipation and case temperature on thermal resistance of AlGaN/GaN high-speed electron mobility transistor
    Guo Chun-Sheng
    Li Shi-Wei
    Ren Yun-Xiang
    Gao Li
    Feng Shi-Wei
    Zhu Hui
    ACTA PHYSICA SINICA, 2016, 65 (07)
  • [47] A Microwave High-Power GaN Transistor with Highly-Integrated Active Digital Switch-Mode Driver Circuit
    Maroldt, S.
    Brueckner, P.
    Quay, R.
    Ambacher, O.
    2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
  • [48] Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array
    Tian, Chao
    Sun, Jiabao
    Ping, Yanlei
    Wang, Naizheng
    Han, Baodong
    Liu, Zhao
    Li, Yongjie
    Meng, Jingheng
    Sun, Hongbo
    Wang, Guilei
    Chu, Jian
    Shao, Guangsu
    Shen, Jie
    Qiu, Yunsong
    Park, Ted
    Xiao, Deyuan
    Yoo, Abraham
    Zhao, Chao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (04)
  • [49] Design Loading Resistance of Current Transformers of High-Power Unit in the Mode of Ground Short Circuit
    Zhuravlev, Pavel E.
    Glazyrin, Vladimir E.
    IFOST: 2007 INTERNATIONAL FORUM ON STRATEGIC TECHNOLOGY, 2007, : 359 - 362
  • [50] Thermal resistance reduction in high power superluminescent diodes by using active multi-mode interferometer
    Zang, Zhigang
    Mukai, Keisuke
    Navaretti, Paolo
    Duelk, Marcus
    Velez, Christian
    Hamamoto, Kiichi
    APPLIED PHYSICS LETTERS, 2012, 100 (03)