Anisotropies in the structural properties of strained (311) (In, Ga) As/Ga As-heterostructures

被引：0
|
作者：
Mazuelas, A. [1 ]
Ilg, M. [1 ]
Jenichen, B. [1 ]
Alonso, M.I. [1 ]
Ploog, K.H. [1 ]
机构：
[1] Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin,D-10117, Germany
来源：
Journal of Physics D: Applied Physics | 1995年 / 28卷 / 4A期
关键词：
Anisotropy - Shear strain - X ray diffraction analysis;
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摘要：
We investigate the structural properties of (311) (In,Ga)As/GaAs-heterostructures by means of high-resolution x-ray diffractometry and topography. The low symmetry of the (311) orientation is shown to introduce shear strain. Furthermore, we observe strongly anisotropic diffraction patterns caused by the onset of strain relaxation in heavily strained (311) structures. © 1995 IOP Publishing Ltd.
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