Effect of Treatment in Mercury and Selenium Vapors on the Electric Properties of CdxHg1 - and ZnxHg1 - xSe Solid Solutions.

The conductivity of Cd//xHg//1// minus //xSe and Zn//xHg//1// minus //xSe single crystals in mercury and selenium vapors varies as a function of the annealing time and the Hg and Se vapor pressure. Annealing in mercury vapor increases the charge carrier concentration, while annealing in selenium vapor decreases it. An increase in the mercury vapor pressure during annealing of single crystals leads to an increase in the current carrier concentration and a 2- to 3-fold decrease in the carrier mobility. A theoretical analysis of the results obtained showed that the dominant point defects in Cd//xHg//1// minus //xSe and Zn//xHg//1// minus //xSe are selenium vacancies, while the defect formation process itself is quasi-epitaxial.