共 50 条
- [31] Study on Hole Effective Mass of Strained Si1-xGex/(101)Si 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 362 - +
- [34] Hole mobility of strained Si/(001)Si1−xGex Science China Physics, Mechanics and Astronomy, 2012, 55 : 48 - 54
- [35] Electron Mobility Model for Strained-Si/(001) Si1-xGex OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 477 - 480
- [36] An improved strained-Si on Si1-xGex MOSFET mobility model 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 1216 - 1219
- [40] HOLE TRANSPORT-THEORY IN PSEUDOMORPHIC SI1-XGEX ALLOYS GROWN ON SI(001) SUBSTRATES PHYSICAL REVIEW B, 1990, 41 (05): : 2912 - 2926