Role of sulfur during Mo etching using SF6 and Cl2 gas chemistries

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作者：
Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of [1 ]
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J Mater Sci Lett | / 17卷 / 1483-1486期
关键词：
Binding energy - Chemical vapor deposition - Chlorine - Film growth - Integrated circuit manufacture - Plasma etching - Silicon wafers - Sputtering - Sulfur compounds - Thermal expansion - Thermodynamic stability - X ray photoelectron spectroscopy;
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摘要：
The surface reaction of Mo etching is investigated with SF6/Cl2 gas plasma by using X-ray photoelectron spectroscopy (XPS). To examine the role of S during the etching of Mo with SF6 gas plasma, pure MO is used in the process. The role of S and the relationship between the etch rate and gas-mixing ratio are discussed.
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