Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions

被引：0
|
作者：
机构：
[1] Das, J.
[2] Degraeve, R.
[3] Roussel, P.
[4] Groeseneken, G.
[5] Borghs, G.
[6] Boeck, J. De
来源：
Das, J. | 1600年 / American Institute of Physics Inc.卷 / 91期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy
    Kugler, Zoe
    Drewello, Volker
    Schaefers, Markus
    Schmalhorst, Jan
    Reiss, Guenter
    Thomas, Andy
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2011, 323 (02) : 198 - 201
  • [42] Dependence of Conductance on the Magnetic-layer Thickness in Magnetic Tunnel Junctions
    Lee, Byung Chan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 74 (10) : 972 - 978
  • [43] Dependence of Conductance on the Magnetic-layer Thickness in Magnetic Tunnel Junctions
    Byung Chan Lee
    Journal of the Korean Physical Society, 2019, 74 : 972 - 978
  • [44] Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
    Feng, G.
    van Dijken, Sebastiaan
    Feng, J. F.
    Coey, J. M. D.
    Leo, T.
    Smith, David J.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
  • [45] Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions
    Useinov, A.
    Gooneratne, C.
    Kosel, J.
    MAGNETISM AND MAGNETIC MATERIALS V, 2012, 190 : 145 - 148
  • [46] Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
    Lim, J. H.
    Raghavan, N.
    Mei, S.
    Lee, K. H.
    Noh, S. M.
    Kwon, J. H.
    Quek, E.
    Pey, Ic. L.
    MICROELECTRONIC ENGINEERING, 2017, 178 : 308 - 312
  • [47] Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions
    Oliver, B
    Tuttle, G
    He, Q
    Tang, XF
    Nowak, J
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 1315 - 1322
  • [48] Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions
    Oliver, Bryan
    Tuttle, Gary
    He, Qing
    Tang, Xuefei
    Nowak, Janusz
    1600, American Institute of Physics Inc. (95):
  • [49] Temperature and voltage dependence of the resistance and magnetoresistance in discontinuous double tunnel junctions
    Fettar, F
    Lee, SF
    Petroff, F
    Vaures, A
    Holody, P
    Schelp, LF
    Fert, A
    PHYSICAL REVIEW B, 2002, 65 (17) : 1744151 - 1744156
  • [50] Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
    Zhu, Jian
    Katine, J. A.
    Rowlands, Graham E.
    Chen, Yu-Jin
    Duan, Zheng
    Alzate, Juan G.
    Upadhyaya, Pramey
    Langer, Juergen
    Amiri, Pedram Khalili
    Wang, Kang L.
    Krivorotov, Ilya N.
    PHYSICAL REVIEW LETTERS, 2012, 108 (19)
12345