Oxygen depth profiling study of copper oxide films on silicon (100) substrates by 16O(α,α)16O resonance

被引：0
|
作者：
Li, Jian [1 ]
Matienzo, L.J. [1 ]
Revesz, P. [1 ]
Vizkelethy, Gy. [1 ]
Wang, S.Q. [1 ]
Kaufman, J.J. [1 ]
Mayer, J.W. [1 ]
机构：
[1] Cornell Univ, United States
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1990年 / 46卷 / 1-4期
关键词：
Charged Particles--Scattering - Ions--Scattering - Oxygen - Spectroscopy; Electron; -; X-rays--Diffraction;
D O I：
10.1016/0168-583X(90)90714-6
中图分类号：
学科分类号：
摘要：
Oxygen out-diffusion in thin CuO films (300 nm thick) deposited on Si (100) substrates has been studied by conventional Rutherford backscattering spectrometry (RBS), 3.045 MeV 16O(α, α)16O resonance, X-ray photoelectron spectroscopy (XPS) depth profiling, and X-ray diffractometry (XRD). Oxygen depletion proceeds progressively inward from the surface inducing a transformation from the initial CuO into Cu2O at temperatures in the range of 450 to 750°C during vacuum annealing. Using the oxygen resonance technique, the oxygen depth profiles for the above given transformation were obtained and they are compared to results obtained by XPS depth profiling.
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页码：287 / 290
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