Oxygen depth profiling study of copper oxide films on silicon (100) substrates by 16O(α,α)16O resonance

被引：0

作者：

Li, Jian ^{[1
]}

Matienzo, L.J. ^{[1
]}

Revesz, P. ^{[1
]}

Vizkelethy, Gy. ^{[1
]}

Wang, S.Q. ^{[1
]}

Kaufman, J.J. ^{[1
]}

Mayer, J.W. ^{[1
]}

机构：

[1] Cornell Univ, United States

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1990年 / 46卷 / 1-4期

关键词：

Charged Particles--Scattering - Ions--Scattering - Oxygen - Spectroscopy; Electron; -; X-rays--Diffraction;

D O I：

10.1016/0168-583X(90)90714-6

中图分类号：

学科分类号：

摘要：

Oxygen out-diffusion in thin CuO films (300 nm thick) deposited on Si (100) substrates has been studied by conventional Rutherford backscattering spectrometry (RBS), 3.045 MeV 16O(α, α)16O resonance, X-ray photoelectron spectroscopy (XPS) depth profiling, and X-ray diffractometry (XRD). Oxygen depletion proceeds progressively inward from the surface inducing a transformation from the initial CuO into Cu2O at temperatures in the range of 450 to 750°C during vacuum annealing. Using the oxygen resonance technique, the oxygen depth profiles for the above given transformation were obtained and they are compared to results obtained by XPS depth profiling.

引用

页码：287 / 290