Si-induced disordering of In0.53Ga0.47As/In0.52Al0.48 As multiquantum well structure

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作者：
Miyazawa, Takeo [1 ]
Kawamura, Yuichi [1 ]
Mikami, Osamu [1 ]
机构：
[1] NTT, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 09期
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页码：1731 / 1733
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