Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

被引：0
|
作者：
Li, Hongjian [1 ,2 ,3 ]
Huang, Baiyun [1 ]
Yi, Danqing [2 ]
Cui, Haoyang [3 ]
Peng, Jingcui [3 ]
机构：
[1] Lab. for Powder Metall., Central South Univ., Changsha 410083, China
[2] Coll. of Mat. Sci. and Eng., Central South Univ., Changsha 410083, China
[3] Dept. of Appl. Phys., Hu'nan Univ., Changsha 410082, China
来源：
Chinese Optics Letters | 2003年 / 1卷 / 11期
关键词：
Electroluminescence; -; Photoluminescence;
D O I：
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中图分类号：
学科分类号：
摘要：
We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690 nm.
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页码：677 / 679
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