Low-temperature synthesis of diamond films in thermoassisted rf plasma chemical vapor deposition

被引:0
|
作者
Watanabe, Ichiro [1 ]
Matsushita, Takashi [1 ]
Sasahara, Koujyu [1 ]
机构
[1] Faculty of Technology Kanazawa Univ, Kanazawa, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 5 A期
关键词
Glow Discharges - Low Temperature Engineering - Plasma Devices - Spectroscopy; Raman;
D O I
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中图分类号
学科分类号
摘要
The synthesis of diamond films using radio-frequency (13.56 MHz) glow discharge plasma chemical vapor deposition (CVD) is investigated. A variety of films are prepared from a mixture of ethyl alcohol-and hydrogen; and they are evaluated using Raman spectroscopy. Diamond films grow when external heating is used in combination with the radio-frequency glow discharge. The films grow at temperatures between 350 and 800°C. In this temperature range, film of reasonable quality is obtained at 550 approximately 600°C. The diamond grows even at the low temperature of 350°C although it contains a few nondiamond carbons. These temperatures are considerably lower than those generally regarded as the optimal regime for diamond growth.
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页码:1428 / 1431
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