Enhanced hole mobilities in tensile-strained Si1-yCy alloy PMOSFETs

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作者：
Quinones, E. [1 ]
Ray, S.K. [1 ]
Liu, K.C. [1 ]
Banerjee, S. [1 ]
机构：
[1] Univ of Texas at Austin, Austin, United States
来源：
Annual Device Research Conference Digest | 1999年
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页码：182 / 183
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