Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals

被引：0

作者：

Puzanov, Nikolai I. ^{[1
]}

Eidenzon, Anna M. ^{[1
]}

Puzanov, Dmitri N. ^{[1
]}

Furukawa, Jun ^{[1
,2
]}

Harada, Kazuhiro ^{[1
,3
]}

Ono, Naoki ^{[1
,2
]}

Shimanuki, Yasushi ^{[1
,2
]}

机构：

[1] Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia

[2] Mitsubishi Materials Silicon Corporation, Technology Division, 314 Nishisangao, Noda, Chiba 278-0015, Japan

[3] Mitsubishi Materials Silicon Corporation, Production Division, 4-3146-12 Yawatahara, Yonezawa, Yamagata 992-1128, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：464 / 471

共 39 条

[31] FLOW MODE TRANSITION AND ITS EFFECTS ON CRYSTAL-MELT INTERFACE SHAPE AND OXYGEN DISTRIBUTION FOR CZOCHRALSKI-GROWN SI SINGLE-CRYSTALS
WATANABE, M
EGUCHI, M
KAKIMOTO, K
ONO, H
KIMURA, S
HIBIYA, T
JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 285 - 290
[32] A comparative study of point defect aggregates in high purity single crystals of silicon grown by the czochralski and the float zone methods
Ramanan, RR
Bhagavannarayana, G
Lal, K
SEMICONDUCTOR DEVICES, 1996, 2733 : 269 - 273
[33] In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures
Fedina, L
Lebedev, OI
Van Tendeloo, G
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Mironov, OA
Parker, EHC
PHYSICAL REVIEW B, 2000, 61 (15) : 10336 - 10345
[34] A REAL-TIME SIMULATION OF POINT-DEFECT REACTIONS NEAR THE SOLID AND MELT INTERFACE OF A 200-MM DIAMETER CZOCHRALSKI SILICON CRYSTAL
WIJARANAKULA, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (11) : 3306 - 3316
[35] Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation
Ishikawa, Yoichiro
Tajima, Michio
Kiuchi, Hirotatsu
Ogura, Atsushi
Miyamura, Yoshiji
Harada, Hirofumi
Kakimoto, Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
[36] DIAMETER STABILIZATION OF CZOCHRALSKI-GROWN SR0.61BA0.39NB2O6 (SBN) CRYSTALS USING REAL-TIME COMPUTER CONTROL
WILDE, JP
HESSELINK, L
FEIGELSON, RS
JOURNAL OF CRYSTAL GROWTH, 1991, 113 (3-4) : 337 - 359
[37] Theoretical distributions of point-defect concentration in a Si ingot grown inside a melt using the noncontact crucible method considering the accumulation effect of diffusion flux
Nakajima, Kazuo
Nakanishi, Masami
Su, Martin
Hsu, Chuck
JOURNAL OF CRYSTAL GROWTH, 2020, 547
[38] Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering technique
Natl Physical Lab, New Delhi, India
J Cryst Growth, 4 (377-382):
[39] INFLUENCE OF THE PROCESSES OF POINT-DEFECT ANNIHILATION ON THE GROWTH OF INTERSTITIAL ATOM CLUSTERS DURING IRRADIATION OF SI AND GE CRYSTALS WITH ELECTRONS IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE
ASEEV, AL
DENISENKO, SG
FEDINA, LI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 352 - 355

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