Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals

被引：0
|
作者：
Puzanov, Nikolai I. [1 ]
Eidenzon, Anna M. [1 ]
Puzanov, Dmitri N. [1 ]
Furukawa, Jun [1 ,2 ]
Harada, Kazuhiro [1 ,3 ]
Ono, Naoki [1 ,2 ]
Shimanuki, Yasushi [1 ,2 ]
机构：
[1] Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia
[2] Mitsubishi Materials Silicon Corporation, Technology Division, 314 Nishisangao, Noda, Chiba 278-0015, Japan
[3] Mitsubishi Materials Silicon Corporation, Production Division, 4-3146-12 Yawatahara, Yonezawa, Yamagata 992-1128, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：464 / 471
相关论文
共 39 条
  • [1] Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals
    Puzanov, NI
    Eidenzon, AM
    Puzanov, DN
    Furukawa, J
    Harada, K
    Ono, N
    Shimanuki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 464 - 471
  • [2] Point defect and microdefect dynamics in Czochralski-grown silicon: Simulations and analysis of self-consistent models
    Sinno, T
    Brown, RA
    SOLID STATE PHENOMENA, 1997, 57-8 : 343 - 348
  • [3] THE ANNEALING OF DEFECT CLUSTERS IN CZOCHRALSKI-GROWN Si AND Si Ge SAMPLES
    Varentsov, M. D.
    Gaidar, G. P.
    Dolgolenko, A. P.
    Litovchenko, P. G.
    UKRAINIAN JOURNAL OF PHYSICS, 2007, 52 (04): : 372 - 377
  • [4] Neural network reinforced point defect concentration estimation model for Czochralski-grown silicon crystals
    Avci, Mutlu
    Yamacli, Serhan
    MATHEMATICAL AND COMPUTER MODELLING, 2010, 51 (7-8) : 857 - 862
  • [5] EFFECT OF GROWTH RATE ON DEFECT STRUCTURE OF CZOCHRALSKI-GROWN SINGLE CRYSTALS
    FARNUM, EH
    BAUGHMAN, RJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (11): : 1340 - &
  • [6] Numerical Simulation of Thermal Stress Distributions in Czochralski-Grown Silicon Crystals
    Kumar, M. Avinash
    Srinivasan, M.
    Ramasamy, P.
    62ND DAE SOLID STATE PHYSICS SYMPOSIUM, 2018, 1942
  • [7] Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals
    Sinno, T
    Brown, RA
    von Ammon, W
    Dornberger, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (01) : 302 - 318
  • [8] Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method
    Suezawa, Masashi
    Fukata, Naoki
    Vanhellemont, Jan
    Yonenaga, Ichiro
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (08)
  • [9] PHOTO-LUMINESCENCE RELATED TO DISLOCATIONS IN ANNEALED CZOCHRALSKI-GROWN SI CRYSTALS
    TAJIMA, M
    MATSUSHITA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L589 - L591
  • [10] Modeling point-defect distribution in dislocation-free Si crystals grown from the melt
    Puzanov, NI
    INORGANIC MATERIALS, 1996, 32 (01) : 1 - 9
1234